Methods of fabricating polycrystalline diamond compacts

ABSTRACT

Embodiments relate to methods of manufacturing polycrystalline diamond compacts (“PDCs”). In an embodiment, a method of fabricating a PDC includes positioning a plurality of diamond particles adjacent to a cemented carbide material. The cemented carbide material includes one or more types of tungsten-containing eta phases. The method further includes subjecting the plurality of diamond particles and the cemented carbide material to a high-pressure/high-temperature process effective to sinter the plurality of diamond particles so that a polycrystalline diamond table is formed without tungsten carbide grains of the cemented carbide material exhibiting abnormal grain growth that project into the polycrystalline diamond table.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is continuation of U.S. application Ser. No. 13/285,262filed on 31 Oct. 2011, which is a division of U.S. application Ser. No.12/393,391 filed on 26 Feb. 2009 (now U.S. Pat. No. 8,069,937 issued on6 Dec. 2011), the contents of which are incorporated herein, in theirentirety, by this reference.

BACKGROUND

Wear-resistant, polycrystalline diamond compacts (“PDCs”) are utilizedin a variety of mechanical applications. For example, PDCs are used indrilling tools (e.g., cutting elements, gage trimmers, etc.), machiningequipment, bearing apparatuses, wire-drawing machinery, and in othermechanical apparatuses.

PDCs have found particular utility as superabrasive cutting elements inrotary drill bits, such as roller-cone drill bits and fixed-cutter drillbits. A PDC cutting element typically includes a superabrasive diamondlayer commonly known as a diamond table. The diamond table is formed andbonded to a cemented carbide substrate using ahigh-pressure/high-temperature (“HPHT”) process. The PDC cutting elementmay be brazed directly into a preformed pocket, socket, or otherreceptacle formed in a bit body. The cemented carbide substrate mayoften be brazed or otherwise joined to an attachment member, such as acylindrical backing A rotary drill bit typically includes a number ofPDC cutting elements affixed to the bit body. It is also known that astud carrying the PDC may be used as a PDC cutting element when mountedto a bit body of a rotary drill bit by press-fitting, brazing, orotherwise securing the stud into a receptacle formed in the bit body.

Conventional PDCs are normally fabricated by placing a cemented tungstencarbide substrate into a container with a volume of diamond particlespositioned on a surface of the cemented tungsten carbide substrate. Anumber of such containers may be loaded into an HPHT press. Thesubstrate(s) and volume(s) of diamond particles are then processed underdiamond-stable HPHT conditions. During the HPHT process, a metal-solventcatalyst cementing constituent of the cemented tungsten carbidesubstrate, such as cobalt from a cobalt-cemented tungsten carbidesubstrate, liquefies and infiltrates into interstitial regions betweenthe diamond particles. The cobalt acts as a catalyst to promoteintergrowth between the diamond particles, which results in formation ofa polycrystalline diamond (“PCD”) table of bonded diamond grains havingdiamond-to-diamond bonding therebetween that is bonded to the cementedtungsten carbide substrate. Interstitial regions between the bondeddiamond grains are occupied by the metal-solvent catalyst.

During the HPHT process, tungsten carbide grains in a region of thecemented tungsten carbide substrate located adjacent to the PCD tablecan experience significant abnormal grain growth (“AGG”). Such tungstencarbide grains that exhibit abnormal grain growth can project from thecemented tungsten carbide substrate into the PCD table to therebyintroduce stress concentrations and/or defects that can cause the PCDtable to delaminate from the cemented tungsten carbide substrate whenloaded during subterranean drilling operations. FIG. 1 is aphotomicrograph of a microstructure 100 of a PDC taken at amagnification of 750 times in a scanning electron microscope that showstungsten carbide grains 102 that exhibit AGG projecting from a cementedtungsten carbide substrate 104 into a PCD table 106. As shown in FIG. 1,the tungsten carbide grains 102 have experienced significant graingrowth compared to other unaffected tungsten carbide grains 108 of thecemented tungsten carbide substrate 104. For example, the tungstencarbide gains 102 can be about five to about thirty times the averagegrain size of the unaffected tungsten carbide grains 108 and may exhibitan aspect ratio of fifty to one in some cases.

SUMMARY

Embodiments of the invention relate to PDCs including a PCD table thatis substantially free of defects formed due to AGG of tungsten carbidegrains, and methods of fabricating such PDCs by bonding a PCD table toor integrally forming a PCD table with a cemented carbide substrate thatincludes one or more types of carbon-deficient tungsten-containing etaphases prior to HPHT processing. In an embodiment, a PDC comprises acemented tungsten carbide substrate including an interfacial surfacethat is substantially free of tungsten carbide grains exhibiting AGG,and a PCD table bonded to the interfacial surface of the cementedtungsten carbide substrate. The PCD table includes a plurality of bondeddiamond grains defining a plurality of interstitial regions. At least aportion of the interstitial regions includes a metal-solvent catalystdisposed therein. In some embodiments, the PCD table may besubstantially free of chromium. In other embodiments, the PCD table andthe cemented tungsten carbide substrate may each include chromium.

In an embodiment, a method of fabricating a PDC is disclosed. The methodincludes positioning a plurality of diamond particles adjacent to acemented carbide material. The cemented carbide material includes one ormore tungsten-containing eta phases. The method further includessubjecting the plurality of diamond particles and the cemented carbidematerial to an HPHT process to sinter the plurality of diamond particlesso that the PCD table is formed. In an embodiment, the cemented carbidematerial may be in the form of a cemented carbide substrate includingthe one or more tungsten-containing eta phases. In an embodiment, thecemented tungsten carbide material may be in the form of cementedcarbide particles positioned between the plurality of diamond particlesand a cemented tungsten carbide substrate.

In an embodiment, a method of fabricating a PDC includes positioning acombination adjacent to a cemented carbide substrate. The combinationmay include a plurality of diamond particles and a pluralitycarbide-forming particles, a plurality carbon-deficient carbideparticles, a cemented carbide material including one or moretungsten-containing eta phases, or combinations thereof. The methodfurther includes subjecting the combination and the cemented carbidesubstrate to an HPHT process to sinter the plurality of diamondparticles so that a PCD table is formed

In an embodiment, a PDC includes a cemented tungsten carbide substrateincluding a table interfacial surface, and a pre-sintered PCD tableincluding bonded diamond grains defining interstitial regions and atungsten-containing material. The pre-sintered PCD table issubstantially free of defects formed due to AGG of tungsten carbidegrains during the fabrication thereof. The pre-sintered PCD tablefurther includes a first region extending inwardly from an upper surfaceand a second region extending inwardly from a substrate interfacialsurface that is bonded to the table interfacial surface of the cementedtungsten carbide substrate. The interstitial regions of the secondregion include an infiltrant disposed therein.

In an embodiment, a method of fabricating a PDC is disclosed. The methodincludes positioning an at least partially leached PCD table at leastproximate to a cemented carbide substrate. The at least partiallyleached PCD table is substantially free of defects formed due totungsten carbide grains exhibiting AGG during the fabrication thereof.The method further includes subjecting the at least partially leachedPCD table and the cemented carbide substrate to an HPHT process to atleast partially infiltrate the at least partially leached PCD table witha metal-solvent catalyst. In some embodiment, the at least partiallyleached PCD table includes a tungsten-containing material, the cementedcarbide substrate includes one or more tungsten-containing eta phases,and/or a plurality carbide-forming particles, a pluralitycarbon-deficient carbide particles, a cemented carbide materialincluding one or more tungsten-containing eta phases, or combinationsthereof may be positioned between the at least partially leached PCDtable and the cemented carbide substrate.

Other embodiments include applications utilizing the disclosed PDCs invarious articles and apparatuses, such as rotary drill bits, machiningequipment, and other articles and apparatuses.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings illustrate several embodiments of the invention, whereinidentical reference numerals refer to identical elements or features indifferent views or embodiments shown in the drawings.

FIG. 1 is a photomicrograph of a microstructure of a PDC taken at amagnification of 750 times in a scanning electron microscope that showstungsten carbide grains exhibiting AGG projecting from a cementedtungsten carbide substrate into a PCD table.

FIG. 2 is a cross-sectional view of an embodiment of a PDC including aPCD table integrally formed with a cemented tungsten carbide substratethat is substantially free of tungsten carbide grains exhibiting AGG.

FIG. 3 is a schematic illustration of an embodiment of a method forfabricating the PDC shown in FIG. 2.

FIG. 4 is a cross-sectional view of an embodiment of a PDC including apre-sintered PCD table that is substantially free of defects due totungsten carbide grains exhibiting AGG and bonded to a cemented tungstencarbide substrate that is substantially free of tungsten carbide grainsexhibiting AGG.

FIG. 5 is a cross-sectional view of an assembly to be HPHT processed toform the PDC shown in FIG. 4.

FIG. 6 is an isometric view of an embodiment of a rotary drill bit thatmay employ one or more of the disclosed PDC embodiments.

FIG. 7 is a top elevation view of the rotary drill bit shown in FIG. 6.

DETAILED DESCRIPTION

Embodiments of the invention relate to PDCs including a PCD table thatis substantially free of defects formed due to tungsten carbide grainsexhibiting AGG, and methods of fabricating such PDCs by bonding a PCDtable to or integrally forming a PCD table with a cemented carbidesubstrate that includes one or more types of carbon-deficienttungsten-containing eta phases prior to HPHT processing. The disclosedPDCs may be used in a variety of applications, such as rotary drillbits, machining equipment, and other articles and apparatuses.

FIG. 2 is a cross-sectional view of an embodiment of a PDC 200 includinga PCD table 202 integrally formed with a cemented tungsten carbidesubstrate 208 that is substantially free of tungsten carbide grainsexhibiting AGG. The PCD table 202 includes a plurality of directlybonded-together diamond grains exhibiting diamond-to-diamond bondingtherebetween, which define a plurality of interstitial regions. Themicrostructure and mechanical properties of the PCD table 202 arecharacteristic of being formed in an HPHT process as opposed to beingdeposited, for example, by chemical or physical vapor deposition. ThePCD table 202 includes at least one lateral surface 204 and a working,upper surface 206. It is noted that at least a portion of the at leastone lateral surface 204 may also function as a working surface thatcontacts a subterranean formation during drilling operations.

A portion of or substantially all of the interstitial regions include ametal-solvent catalyst disposed therein. In some embodiments, themetal-solvent catalyst may be infiltrated from the cemented tungstencarbide substrate 208. In some embodiments, substantially all of theinterstitial regions are filled with the metal-solvent catalyst. Inother embodiments, a selected portion of the PCD table 202 may bedepleted of the metal-solvent catalyst via a leaching process in an acid(e.g., aqua regia, nitric acid, hydrofluoric acid, or other suitableacid). In such an embodiment, the PCD table 202 includes a leachedregion from which the metal-solvent catalyst has been depleted. Forexample, the leached region may extend inwardly from the upper surface206 to a selected depth (e.g., about 50 μm to about 1000 μm) within thePCD table 202, while the interstitial regions of a region of the PCDtable 202 adjacent to the cemented tungsten carbide substrate 208include metal-solvent catalyst therein. For example, in an embodiment,the selected depth may be about 200 μm to about 500 μm.

The cemented tungsten carbide substrate 208 includes an interfacialsurface 210 that is bonded to the PCD table 202. The interfacial surface210 is substantially free of tungsten carbide grains exhibiting AGG thatproject into the PCD table 202. Therefore, the interfacial surface 210is characterized by being substantially free of tungsten carbide grainshaving an average grain size greater than an average grain size of thetungsten carbide grains remote from the interfacial surface 210.Accordingly, the PCD table 202 is substantially free of defects (e.g.,pits) that are caused by such AGG of tungsten carbide grains duringformation of the PCD table 202. In particular, the PCD table 202 issubstantially free of such defects that project inwardly from a surfacethat is bonded to the interfacial surface 210 of the cemented tungstencarbide substrate 208. The cemented tungsten carbide substrate 208comprises a plurality of tungsten carbide grains cemented together witha metal-solvent catalyst cementing constituent, such as cobalt, iron,nickel, or alloys thereof. For example, in an embodiment, the cementedtungsten carbide substrate 208 is a cobalt-cemented tungsten carbidesubstrate. The cemented tungsten carbide substrate 208 may also includeone or more additional carbides besides tungsten carbide, such astantalum carbide, vanadium carbide, niobium carbide, chromium carbide,titanium carbide, or combinations of the foregoing carbides. In anembodiment, the PCD table 202 may be substantially free of chromium(e.g., in substantially pure chromium, a chromium alloy, chromiumcarbide, or combinations thereof). For example, when the cementedtungsten carbide substrate 208 is substantially free of chromium, thePCD table 202 may be substantially free of chromium. In anotherembodiment, the PCD table 202 may include chromium (e.g., insubstantially pure chromium, a chromium alloy, chromium carbide, orcombinations thereof) infiltrated into the PCD table 202 from chromiumpresent in the cemented tungsten carbide substrate 208 due to thepresence of chromium carbide therein, mixed with the diamond particlesthat are sintered to form the PCD table 202, or combinations of theforegoing.

As will be discussed in more detail below with respect to FIG. 3, thecemented tungsten carbide substrate 208 initially includes one or moretypes of tungsten-containing eta phases prior to the PCD table 202 beingformed in an HPHT process. Eta phase is a ternary compound of, forexample, tungsten, cobalt, and carbon. For example, when the cementedtungsten carbide substrate 208 is a cobalt-cemented tungsten carbidesubstrate, the eta phase may be Co_(3.2)W_(2.8)C, Co₂W₄C, Co₆W₆C, orcombinations of the foregoing. Other types of eta phases may also formwhen the metal-solvent catalyst cementing constituent is made fromnickel, iron, or alloys thereof. However, in the PDC 200, subsequent toHPHT processing, the cemented tungsten carbide substrate 208 issubstantially free of eta phase and substantially all of the tungstencarbide is stoichiometric in the form of WC. However, it is noted thatdepending upon the HPHT process conditions, in some embodiments thecemented tungsten carbide substrate 208 may include a residual amount ofeta phase that is not converted to stoichiometric tungsten carbide(“WC”) during formation of the PCD table 202.

In one embodiment, the metal-solvent catalyst cementing constituent maycomprise about 3 to about 20 weight percent (“wt %”) of the cementedtungsten carbide substrate 208, with the balance being substantially WCgrains. In a more detailed embodiment, the metal-solvent catalystcementing constituent may comprise about 9 to about 14 wt % of thecemented tungsten carbide substrate 208, with the balance beingsubstantially WC grains. In some embodiments, the cemented tungstencarbide substrate 208 may also include carbides other than WC in smallamounts, such as about 1 to about 3 wt % of tantalum carbide, vanadiumcarbide, niobium carbide, chromium carbide, titanium carbide, orcombinations of the foregoing carbides.

FIG. 3 is a schematic illustration of an embodiment of a method forfabricating the PDC 200 shown in FIG. 2. One or more layers of diamondparticles 300 may be positioned adjacent to an interfacial surface 210′of a precursor cemented carbide substrate 208′ that includes one or moretypes of tungsten-containing eta phases. The plurality of diamondparticles of the one or more layers of diamond particles 300 may exhibitone or more selected sizes. The one or more selected sizes may bedetermined, for example, by passing the diamond particles through one ormore sizing sieves or by any other method. In an embodiment, theplurality of diamond particles may include a relatively larger size andat least one relatively smaller size. As used herein, the phrases“relatively larger” and “relatively smaller” refer to particle sizesdetermined by any suitable method, which differ by at least a factor oftwo (e.g., 40 μm and 20 μm). More particularly, in various embodiments,the plurality of diamond particles may include a portion exhibiting arelatively larger size (e.g., 100 μm, 90 μm, 80 μm, 70 μm, 60 μm, 50 μm,40 μm, 30 μm, 20 μm, 15 μm, 12 μm, 10 μm, 8 μm) and another portionexhibiting at least one relatively smaller size (e.g., 30 μm, 20 μm, 10μm, 15 μm, 12 μm, 10 μm, 8 μm, 4 μm, 2 μm, 1 μm, 0.5 μm, less than 0.5μm, 0.1 μm, less than 0.1 μm). In an embodiment, the plurality ofdiamond particles may include a portion exhibiting a relatively largersize between about 40 μm and about 15 μm and another portion exhibitinga relatively smaller size between about 12 μm and 2 μm. Of course, theplurality of diamond particles may also include three or more differentsizes (e.g., one relatively larger size and two or more relativelysmaller sizes) without limitation. In some embodiments, chromium (e.g.,in substantially pure chromium, a chromium alloy, chromium carbide, orcombinations thereof) may be mixed with the diamond particles.

As discussed above, the precursor cemented carbide substrate 208′includes one or more types of tungsten-containing eta phases cementedwith any of the aforementioned metal-solvent catalyst cementingconstituents. For example, when the precursor cemented carbide substrate208′ includes cobalt as the metal-solvent catalyst cementingconstituent, the eta phase is typically Co_(3.2)W_(2.8)C, Co₂W₄C,Co₆W₆C, or combinations of the foregoing.

In some embodiments, the precursor cemented carbide substrate 208′includes substantially only eta phase cemented with the metal-solventcatalyst cementing constituent and substantially no stoichiometric WC.In other embodiments, the precursor cemented carbide substrate 208′includes eta phase, stoichiometric WC, and the metal-solvent catalystcementing constituent. For example, in an embodiment, the precursorcemented carbide substrate 208′ includes about 40 to about 60 wt % etaphase, about 40 to about 50 wt % stoichiometric WC and other carbides(if present), and about 10 to about 20 wt % metal-solvent catalystcementing constituent. In a more specific embodiment, the metal-solventcatalyst cementing constituent may comprise about 10 to about 14 wt % ofthe precursor cemented tungsten carbide substrate 208′, with the balancebeing substantially one or more types of eta phases (e.g.,CO_(3.2)W_(2.8)C, Co₂W₄C, and/or Co₆W₆C) and stoichiometric WC. In anembodiment, the eta phase may be present in the precursor cementedcarbide substrate 208′ at the interfacial surface 210′ and/or in aregion of indeterminate shape and depth that extends inwardly from theinterfacial surface 210′. In one or more of the above-describedcompositions for the precursor cemented carbide substrate 208′, theratio of the amount of carbon to the amount of tungsten (“C/W ratio”) atthe interfacial surface 210′ may be less than 0.065 and, more typically,the C/W ratio may be about 0.030 to about 0.050.

The precursor cemented carbide substrate 208′ and the one or more layersof diamond particles 300 may be placed in a pressure transmittingmedium, such as a refractory metal can embedded in pyrophyllite or othergasket medium. The pressure transmitting medium, including the precursorcemented carbide substrate 208′ and diamond particles therein, may besubjected to an HPHT process using an ultra-high pressure press tocreate temperature and pressure conditions at which diamond is stable.The temperature of the HPHT process may be at least about 1000° C.(e.g., about 1200° C. to about 1600° C.) and the pressure of the HPHTprocess may be at least 4.0 GPa (e.g., about 5.0 GPa to about 8.0 GPa)for a time sufficient to sinter the diamond particles to form the PCDtable 202. For example, the pressure of the HPHT process may be about 5GPa to about 7 GPa and the temperature of the HPHT process may be about1150° C. to about 1450° C. (e.g., about 1200° C. to about 1400° C.).Upon cooling from the HPHT process, the PCD table 202 becomesmetallurgically bonded to the cemented tungsten carbide substrate 208.

During the HPHT process, the metal-solvent catalyst cementingconstituent from the precursor cemented carbide substrate 208′ may beliquefied and may infiltrate into the diamond particles of the one ormore layers of diamond particles 300. The infiltrated metal-solventcatalyst cementing constituent functions as a catalyst that catalyzesformation of directly bonded-together diamond grains to form the PCDtable 202. During the HPHT process, carbon from the diamond particles ofthe one or more layers of diamond particles 300 also diffuses into theprecursor cemented carbide substrate 208′ and reacts with the eta phasepresent in the precursor cemented carbide substrate 208′ so thatsubstantially all of the eta phase therein is converted tostoichiometric WC thereby forming the cemented tungsten carbidesubstrate 208. Thus, the resultant cemented tungsten carbide substrate208 is substantially free of eta phase, which can decrease fracturetoughness or cause degradation of other mechanical properties. Thegeometry of the cemented tungsten carbide substrate 208 may besubstantially congruent with the geometry of the precursor cementedcarbide substrate 208′ after HPHT processing.

If the precursor cemented carbide substrate 208′ was generally free ofthe eta phase and instead included substantially only stoichiometric WCcemented with a metal-solvent catalyst cementing constituent, the carbonfrom the diamond particles of the one or more layers of diamondparticles 300 would react with tungsten in solid solution with theliquefied metal-solvent catalyst cementing constituent and precipitateas elongated stoichiometric WC grains (known as tungsten carbide grainsexhibiting AGG) that project into the diamond particles of the one ormore layers of diamond particles 300 being sintered to thereby causedefects in the PCD table being formed. For example, at the HPHT processconditions, tungsten has a solubility of about 40 wt % in cobalt. Suchtungsten in solid solution with cobalt would react with carbon diffusedfrom the diamond particles of the one or more layers of diamondparticles 300 into the substrate and precipitate as tungsten carbidegrains exhibiting AGG during cooling from the HPHT process.

As an alternative to or in addition to using the precursor cementedcarbide substrate 208′ to limit formation of tungsten carbide grainsexhibiting AGG during HPHT processing, in another embodiment, aplurality carbide-forming particles, a plurality of carbon-deficientcarbide particles, a plurality of cemented carbide particles includingone or more types of tungsten-containing eta phases, or combinationsthereof may be mixed with the plurality of diamond particles of the oneor more layers of diamond particles 300 to form a mixture. Thecarbide-forming particles may comprise chromium, tungsten, molybdenum,vanadium, titanium, niobium, tantalum, zirconium, iron, alloys thereof,or combinations of the forgoing. The carbon-deficient carbide particlesmay comprises carbon-deficient carbide particles of chromium, tungsten,molybdenum, vanadium, titanium, niobium, tantalum, zirconium, iron, orcombinations of the forgoing. In an embodiment, tungsten particles(e.g., substantially pure tungsten particles), carbon-deficient tungstencarbide particles (e.g., W₂C particles), or combinations of theforegoing may be mixed with the diamond particles to form the mixture.In an embodiment, the mixture may include a plurality carbide-formingparticles and/or carbon-deficient carbide particles in an amount ofabout 1 wt % to about 20 wt %, such as about 5 wt % to about 10%. Forexample, the mixture may include approximately 10 wt % tungstenparticles. The addition of the carbide-forming particles, thecarbon-deficient carbide particles, and/or the cemented carbideparticles including one or more types of tungsten-containing eta phaseshelps limit or prevent formation of tungsten carbide grains exhibitingAGG at the interface between the cemented carbide substrate and the PCDtable so-formed during HPHT processing. The PCD table so-formed mayinclude one or carbides (e.g., stoichiometric WC) as a result of thecarbide-forming particles, the carbon-deficient carbide particles,and/or the tungsten-containing eta phase particles reacting with carbonfrom the diamond particles during the HPHT process.

As an alternative to or in addition to using the precursor cementedcarbide substrate 208′ and/or mixing carbide-forming particles and/orcarbon-deficient carbide particles with the diamond particles to limitformation of tungsten carbide grains exhibiting AGG during HPHTprocessing, in another embodiment, a plurality cemented carbideparticles including one or more types of tungsten-containing eta phases,a layer comprising a cemented carbide material including one or moretypes of tungsten-containing eta phases, carbide-forming particles,carbon-deficient carbide particles, or combinations thereof may bepositioned between the one or more layers of diamond particles 300 andan interfacial surface of a cemented tungsten carbide substrate. Thepresence of the eta phase, carbide-forming particles, and/orcarbon-deficient carbide particles helps limit or prevent formation oftungsten carbide grains exhibiting AGG at the interface between thecemented tungsten carbide substrate and the PCD table so-formed duringHPHT processing.

FIG. 4 is a cross-sectional view of an embodiment of a “two-step” PDC400 including a pre-sintered PCD table 402 that is substantially free ofdefects due to tungsten carbide grains exhibiting AGG and bonded to acemented tungsten carbide substrate 208 that is substantially free oftungsten carbide grains exhibiting AGG. The pre-sintered PCD table 402includes a working, upper surface 404 and an opposing substrateinterfacial surface 406 that is bonded to the interfacial surface 210 ofthe cemented tungsten carbide substrate 208. The pre-sintered PCD table402 is substantially free of defects (e.g., pits, cracks, orcombinations thereof) due to being formed on a cemented tungsten carbidesubstrate in which AGG of tungsten carbide grains did not occur and, inparticular, the substrate interfacial surface 406 is substantially freeof such defects. The pre-sintered PCD table 402 includes a first region408 extending inwardly from the upper surface 404 and a second region410 extending inwardly from the substrate interfacial surface 406.

The pre-sintered PCD table 402 includes a plurality of directlybonded-together diamond grains defining a plurality of interstitialregions. In an embodiment, the pre-sintered PCD table 402 may have beenformed on a cemented tungsten carbide substrate and, therefore, thepre-sintered PCD table 402 may include a tungsten-containing materialinterstitially disposed between the bonded diamond grains thereof, suchas substantially pure tungsten, tungsten carbide, a tungsten alloy, orcombinations thereof. In another embodiment, the pre-sintered PCD table402 may not have been formed in the presence of tungsten and, in such anembodiment, the pre-sintered PCD table 402 may not include atungsten-containing material. The interstitial regions of the secondregion 410 may include an infiltrant disposed therein infiltrated, forexample, from the cemented tungsten carbide substrate 208, such ascobalt, iron, nickel, or alloys thereof. In an embodiment, theinterstitial regions of the first region 408 may be substantially freeof a metal-solvent catalyst included in and infiltrated from thecemented tungsten carbide substrate 208. For example, in an embodiment,the interstitial regions of the first region 408 may include aninfiltrant disposed therein and/or a reaction product between theinfiltrant and the diamond grains disposed therein, such as silicon, asilicon-cobalt alloy, silicon carbide, cobalt carbide, a mixed carbideof silicon and cobalt, a nonmetallic catalyst (e.g., a carbonatematerial), or combinations thereof. In other embodiments, theinterstitial regions of the first region 408 may not include aninfiltrant and/or a reaction product disposed therein. However, in otherembodiments, the interstitial regions of the first region 408 mayinclude the same type of infiltrant that infiltrated the second region410 from the cemented tungsten carbide substrate 208. Similar to the PCDtable 202 shown in FIG. 2, in some embodiments, the pre-sintered PCDtable 402 may be substantially free of chromium, for example, when thecemented tungsten carbide substrate 208 bonded thereto is substantiallyfree of chromium. In an embodiment, the pre-sintered PCD table 402 mayinclude chromium infiltrated from the cemented tungsten carbidesubstrate 208 that may include chromium carbide and/or introduced intothe pre-sintered PCD table 402 during formation thereof.

FIG. 5 is a cross-sectional view of an assembly 500 to be HPHT processedto form the PDC 400 shown in FIG. 4. The assembly 500 comprises an atleast partially leached PCD table 502 including the upper surface 404and the substrate interfacial surface 406. The at least partiallyleached PCD table 502 is substantially free of defects (e.g., pits,cracks, or combinations thereof) due to being formed on a cementedtungsten carbide substrate in which AGG of tungsten carbide grains didnot occur or due to not being formed on a cemented carbide substrate. Inparticular, the substrate interfacial surface 406 is substantially freeof such defects. Cracking in the at least partially leached PCD table502 is reduced or eliminated during HPHT processing because the at leastpartially leached PCD table 502 is substantially free of such defectsthat can serve as stress concentrations. The at least partially leachedPCD table 502 includes a plurality of directly bonded-together diamondgrains defining interstitial regions that form a network of at leastpartially interconnected pores that enable fluid to flow from thesubstrate interfacial surface 406 to the upper surface 404. The at leastpartially leached PCD table 502 is positioned so that the substrateinterfacial surface 406 thereof is positioned adjacent to theinterfacial surface 210′ of a carbon-deficient precursor cementedcarbide substrate 208′ that includes one or more types oftungsten-containing eta phases.

In an embodiment, the at least partially leached PCD table 502 may beformed by separating the PCD table 202 from the cemented tungstencarbide substrate 208 shown in FIG. 2, and removing at least a portionof or substantially all the metal-solvent catalyst therefrom byleaching. For example, the PCD table 202 may be separated by grindingand/or lapping away the cemented tungsten carbide substrate 208,electro-discharge machining, or combinations of the foregoing materialremoval processes. The metal-solvent catalyst may be at least partiallyremoved from the separated PCD table 202 by immersing the separated PCDtable 202 in an acid, such as aqua regia, nitric acid, hydrofluoricacid, or other suitable acid, to form the at least partially leached PCDtable 502. In some embodiments, a residual amount of the metal-solventcatalyst may still remain even after leaching. For example, theseparated PCD table 202 may be immersed in the acid for about 2 to about7 days (e.g., about 3, 5, or 7 days) or for a few weeks (e.g., about 4weeks) depending on the process employed. It is noted that because themetal-solvent catalyst is infiltrated into the diamond particles from acemented tungsten carbide substrate including tungsten carbide grainscemented with a metal-solvent catalyst (e.g., cobalt, nickel, iron, oralloys thereof), the infiltrated metal-solvent catalyst may carrytungsten and/or tungsten carbide therewith and the PCD table 202 mayinclude such tungsten and/or tungsten carbide therein disposedinterstitially between the bonded diamond grains. The tungsten and/ortungsten carbide may be at least partially removed by the selectedleaching process or may be relatively unaffected by the selectedleaching process.

In another embodiment, the at least partially leached PCD table 502 maybe formed by HPHT sintering a plurality of diamond particles in thepresence of a metal-solvent catalyst and removing at least a portion ofor substantially all the metal-solvent catalyst from sintered PCD bodyby leaching. For example, the metal-solvent catalyst may be infiltratedinto the diamond particles from a metal-solvent catalyst disc (e.g., acobalt disc), mixed with the diamond particles, or combinations of theforegoing.

The assembly 500 may be placed in a pressure transmitting medium, suchas a refractory metal can embedded in pyrophyllite or other gasketmedium. The pressure transmitting medium, including the assembly 500,may be subjected to an HPHT process using an ultra-high pressure pressto create temperature and pressure conditions at which diamond isstable. The temperature of the HPHT process may be at least about 1000°C. (e.g., about 1200° C. to about 1600° C.) and the pressure of the HPHTprocess may be at least 4.0 GPa (e.g., about 5.0 GPa to about 8.0 GPa)so that the metal-solvent catalyst cementing constituent in theprecursor cemented carbide substrate 208′ is liquefied and infiltratesinto the at least partially leached PCD table 502. For example, thepressure of the HPHT process may be about 5 GPa to about 7 GPa and thetemperature of the HPHT process may be about 1150° C. to about 1450° C.(e.g., about 1200° C. to about 1400° C.). Upon cooling from the HPHTprocess, the infiltrated PCD table represented as the pre-sintered PCDtable 402 in FIG. 4 becomes bonded to the cemented tungsten carbidesubstrate 208.

During the HPHT process, carbon from the at least partially leached PCDtable 502 diffuses into the carbon-deficient precursor cemented carbidesubstrate 208′ to substantially convert all of the eta phase therein tostoichiometric WC and form the cemented tungsten carbide substrate 208(FIG. 4). However, depending upon the HPHT process conditions, aresidual amount of eta phase may remain in the cemented tungsten carbidesubstrate 208 after HPHT processing.

In one embodiment, the HPHT process conditions may be accuratelycontrolled so that the metal-solvent catalyst cementing constituent fromthe precursor cemented carbide substrate 208′ only partially infiltratesthe at least partially leached PCD table 502 to form the second region410 (FIG. 4) and the interstitial regions of the first region 408 remainunfilled by the metal-solvent catalyst cementing constituent. Thedistance that the metal-solvent catalyst cementing constituentinfiltrates into the at least partially leached PCD table 502 may becontrolled by selecting the pressure, temperature, and/or process timeemployed in the HPHT process. In one embodiment, the assembly 500 may besubjected to a temperature of about 1150° C. to about 1300° C. (e.g.,about 1270° C. to about 1300° C.) and a corresponding pressure that iswithin the diamond stable region, such as about 5.0 GPa. Suchtemperature and pressure conditions are lower than temperature andpressure conditions typically used to fully infiltrate the at leastpartially leached PCD table 502.

In other embodiments, the metal-solvent catalyst cementing constituentfrom the precursor cemented carbide substrate 208′ substantiallyinfiltrates the at least partially leached PCD table 502 so that theinterstitial regions of the first region 408 (FIG. 4) are also filled bythe metal-solvent catalyst cementing constituent that infiltrates theinterstitial regions of the second region 410 (FIG. 4). In anembodiment, the metal-solvent catalyst cementing constituent thatoccupies the interstitial regions of the first region 408 (FIG. 4) maybe at least partially removed in a subsequent leaching process using anacid (e.g., aqua regia, nitric acid, hydrofluoric acid, or othersuitable acid). For example, the leaching process may substantiallyremove all of the metal-solvent catalyst cementing constituent to aselected depth from the upper surface 404 of about 50 μm to about 1000μm (e.g., about 200 μm to about 500 μm).

Referring again to FIG. 4, in another embodiment, the interstitialregions of the first region 408 may be infiltrated before, during, orafter the HPHT processing that bonds the pre-sintered PCD table 402 tothe cemented tungsten carbide substrate 208, such as with a nonmetalliccatalyst. For example, the nonmetallic catalyst may be selected from acarbonate (e.g., one or more carbonates of Li, Na, K, Be, Mg, Ca, Sr,and Ba), a sulfate (e.g., one or more sulfates of Be, Mg, Ca, Sr, andBa), a hydroxide (e.g., one or more hydroxides of Be, Mg, Ca, Sr, andBa), elemental phosphorous and/or a derivative thereof, a chloride(e.g., one or more chlorides of Li, Na, and K), elemental sulfur and/ora derivative thereof, a polycyclic aromatic hydrocarbon (e.g.,naphthalene, anthracene, pentacene, perylene, coronene, or combinationsof the foregoing) and/or a derivative thereof, a chlorinated hydrocarbonand/or a derivative thereof, a semiconductor material (e.g., germaniumor a geranium alloy), and combinations of the foregoing. For example,one suitable carbonate catalyst is an alkali metal carbonate materialincluding a mixture of sodium carbonate, lithium carbonate, andpotassium carbonate that form a low-melting ternary eutectic system.This mixture and other suitable alkali metal carbonate materials aredisclosed in U.S. patent application Ser. No. 12/185,457, which isincorporated herein, in its entirety, by this reference. The alkalimetal carbonate material disposed in the interstitial regions of thefirst region 408 (FIG. 4) may be partially or substantially completelyconverted to one or more corresponding alkali metal oxides by suitableheat treatment following infiltration.

Referring again to FIG. 5, in another embodiment, at least one layer ofsilicon, a silicon-cobalt alloy, or a mixture of cobalt and siliconparticles may be disposed adjacent to the upper surface 404 of the atleast partially leached PCD table 502 and may infiltrate the at leastpartially leached PCD table 502 during the HPHT process to fill theinterstitial regions of the first region 408 (FIG. 4) with an infiltrantand/or a reaction product between the infiltrant and the diamond grains.As previously discussed, such an infiltrant and/or a reaction productmay include silicon, a silicon-cobalt alloy (e.g., cobalt silicide),silicon carbide, cobalt carbide, a mixed carbide of cobalt and silicon,or combinations of the foregoing. For example, silicon carbide, cobaltcarbide, and/or a mixed carbide of cobalt and silicon are reactionproducts that may be formed by the infiltrant reacting with the diamondgrains of the at least partially leached PCD table 502. In anembodiment, the layer includes silicon particles present in an amount ofabout 50 to about 60 wt % and cobalt particles present in an amount ofabout 40 to about 50 wt %. In a more specific embodiment, the layerincludes silicon particles and cobalt particles present in an amount ofabout equal to or near a eutectic composition of the silicon-cobaltchemical system. In some embodiments, the silicon particles and cobaltparticles may be held together by an organic binder to form a greenlayer of cobalt and silicon particles. In another embodiment, the layermay comprise a thin sheet of a silicon-cobalt alloy or a green layer ofsilicon-cobalt alloy particles formed by mechanical alloying having alow-melting eutectic or near eutectic composition.

As an alternative to or in addition to using the precursor cementedcarbide substrate 208′ to limit formation of tungsten carbide grainsexhibiting AGG during HPHT processing of the assembly 500 shown in FIG.5, in another embodiment, a plurality of cemented carbide particlesincluding one or more types of tungsten-containing eta phases, a layercomprising a cemented carbide material including one or more types oftungsten-containing eta phases, carbide-forming particles,carbon-deficient carbide particles, or combinations thereof may bepositioned between the at least partially leached PCD table 502 and theinterfacial surface 210′ of the precursor cemented carbide substrate208′. The presence of the eta phase, carbide-forming particles, and/orcarbon-deficient carbide particles helps limit or prevent formation oftungsten carbide grains exhibiting AGG at the interface between thecemented carbide substrate 208′ and the at least partially leached PCDtable 502 during HPHT processing.

The carbon-deficient precursor cemented carbide substrate 208′ thatincludes the eta phase may be formed by sintering carbon-deficienttungsten carbide particles (e.g., WC_(x) particles where x may be anyreal number greater than zero and less than 1) with any of theaforementioned metal-solvent catalyst cementing constituents, such ascobalt, nickel, iron, or alloys thereof, so that the eta phase is formedand distributed generally uniformly throughout the sinteredmicrostructure. In another embodiment, stoichiometric tungsten carbideparticles (i.e., WC particles) may be milled (e.g., ball milled) withparticles made from any of aforementioned metal-solvent catalystcementing constituents in an oxidizing atmosphere, such as air or otheroxygen-containing environment. Under such oxidizing conditions, the WCparticles may oxidize during the milling process so thatcarbon-deficient tungsten carbide particles are formed, and the etaphase is formed upon sintering such carbon-deficient tungsten carbideparticles with the particles ball milled therewith and made from themetal-solvent catalyst cementing constituent. In such an embodiment, theeta phase is distributed generally uniformly throughout the sinteredmicrostructure.

In yet another embodiment, a cemented tungsten carbide substrateincluding stoichiometric WC grains cemented with any of theaforementioned metal-solvent catalyst cementing constituents may becoated with an oxide slurry, such as a slurry of aluminum oxide,titanium oxide, and/or zirconium oxide. The coated substrate may beheated in an oxidizing atmosphere (e.g., air) at approximately the sametemperature at which the cemented tungsten carbide substrate wassintered to form eta phase in a region adjacent to the coating. Thecoating may be removed after forming the region including the eta phase.In practice, a plurality of diamond particles to be HPHT sintered may bepositioned adjacent to the region or an at least partially leached PCDtable may be positioned adjacent to the region to be HPHT bondedthereto.

The following working examples provide further detail in connection withthe specific PDC embodiments described above.

WORKING EXAMPLE 1

A PDC was formed according to the following process. A layer of diamondparticles having an average particle size of about 19 μm was placedadjacent to a cobalt-cemented tungsten carbide substrate. Thecobalt-cemented tungsten carbide substrate was carbon deficient andincluded a significant amount of eta phase in addition to stoichiometricWC as determined using optical microscopy. The diamond particles and thecobalt-cemented tungsten carbide substrate were positioned within apyrophyllite cube, and HPHT processed at a temperature of about 1400° C.and a pressure of about 5 GPa to about 7 GPa in a high-pressure cubicpress to form a PDC. The PDC so-formed included a PCD table integrallyformed with and bonded to the cobalt-cemented tungsten carbidesubstrate. Scanning acoustic microscope images of the PDC so-formedshowed an absence of tungsten carbide grains exhibiting AGG at theinterface between the PCD table and the cobalt-cemented tungsten carbidesubstrate. Furthermore, after HPHT processing, scanning acousticmicroscope images of the PDC so-formed showed that the eta phase thatwas previously present in the cobalt-cemented tungsten carbide substrateprior to HPHT processing was converted to stoichiometric WC.

WORKING EXAMPLE 2

A PDC was formed according to the following process. A mixture of about90 wt % diamond particles having an average particle size of about 19 μmand about 10 wt % tungsten powder was formed. A layer of the mixture wasplaced adjacent to a cobalt-cemented tungsten carbide substrate. Thecobalt-cemented tungsten carbide substrate was substantially free of etaphases. The layer and the cobalt-cemented tungsten carbide substratewere positioned within a pyrophyllite cube, and HPHT processed at atemperature of about 1400° C. and a pressure of about 5 GPa to about 7GPa in a high-pressure cubic press to form a PDC. The PDC so-formedincluded a PCD table integrally formed with and bonded to thecobalt-cemented tungsten carbide substrate. Scanning acoustic microscopeimages of the PDC so-formed showed an absence of tungsten carbide grainsexhibiting AGG at the interface between the PCD table and thecobalt-cemented tungsten carbide substrate.

FIG. 6 is an isometric view and FIG. 7 is a top elevation view of anembodiment of a rotary drill bit 600 that includes at least one PDCconfigured according to any of the disclosed PDC embodiments. The rotarydrill bit 600 comprises a bit body 602 that includes radially andlongitudinally extending blades 604 having leading faces 606, and athreaded pin connection 608 for connecting the bit body 602 to adrilling string. The bit body 602 defines a leading end structure fordrilling into a subterranean formation by rotation about a longitudinalaxis 610 and application of weight-on-bit. At least one PDC, configuredaccording to any of the previously described PDC embodiments, may beaffixed to the bit body 602. With reference to FIG. 7, a plurality ofPDCs 612 are secured to the blades 604 of the bit body 602 (FIG. 6). Forexample, each PDC 612 may include a PCD table 614 bonded to a substrate616. More generally, the PDCs 612 may comprise any PDC disclosed herein,without limitation. In addition, if desired, in some embodiments, anumber of the PDCs 612 may be conventional in construction. Also,circumferentially adjacent blades 604 define so-called junk slots 620therebetween. Additionally, the rotary drill bit 600 includes aplurality of nozzle cavities 618 for communicating drilling fluid fromthe interior of the rotary drill bit 600 to the PDCs 612.

FIGS. 6 and 7 merely depict one embodiment of a rotary drill bit thatemploys at least one PDC fabricated and structured in accordance withthe disclosed embodiments, without limitation. The rotary drill bit 600is used to represent any number of earth-boring tools or drilling tools,including, for example, core bits, roller-cone bits, fixed-cutter bits,eccentric bits, bi-center bits, reamers, reamer wings, or any otherdownhole tool including superabrasive compacts, without limitation.

The PDCs disclosed herein (e.g., PDC 200 of FIG. 2 or the PDC 400 ofFIG. 4) may also be utilized in applications other than cuttingtechnology. For example, the disclosed PDC embodiments may be used inwire dies, bearings, artificial joints, inserts, cutting elements, andheat sinks Thus, any of the PDCs disclosed herein may be employed in anarticle of manufacture including at least one superabrasive element orcompact.

Thus, the embodiments of PDCs disclosed herein may be used in anyapparatus or structure in which at least one conventional PDC istypically used. In one embodiment, a rotor and a stator, assembled toform a thrust-bearing apparatus, may each include one or more PDCs(e.g., PDC 200 of FIG. 2 or the PDC 400 of FIG. 4) configured accordingto any of the embodiments disclosed herein and may be operably assembledto a downhole drilling assembly. U.S. Pat. Nos. 4,410,054; 4,560,014;5,364,192; 5,368,398; and 5,480,233, the disclosure of each of which isincorporated herein, in its entirety, by this reference, disclosesubterranean drilling systems within which bearing apparatuses utilizingsuperabrasive compacts disclosed herein may be incorporated. Theembodiments of PDCs disclosed herein may also form all or part of heatsinks, wire dies, bearing elements, cutting elements, cutting inserts(e.g., on a roller-cone-type drill bit), machining inserts, or any otherarticle of manufacture as known in the art. Other examples of articlesof manufacture that may use any of the PDCs disclosed herein aredisclosed in U.S. Pat. Nos. 4,811,801; 4,268,276; 4,468,138; 4,738,322;4,913,247; 5,016,718; 5,092,687; 5,120,327; 5,135,061; 5,154,245;5,460,233; 5,544,713; and 6,793,681, the disclosure of each of which isincorporated herein, in its entirety, by this reference.

While various aspects and embodiments have been disclosed herein, otheraspects and embodiments are contemplated. The various aspects andembodiments disclosed herein are for purposes of illustration and arenot intended to be limiting. Additionally, the words “including,”“having,” and variants thereof (e.g., “includes” and “has”) as usedherein, including the claims, shall have the same meaning as the word“comprising” and variants thereof (e.g., “comprise” and “comprises”).

What is claimed is:
 1. A method of fabricating a polycrystalline diamondcompact, comprising: forming an assembly including a plurality oftungsten-carbide-containing particles positioned between an at leastpartially leached polycrystalline diamond table and a cemented carbidesubstrate; and subjecting the assembly to ahigh-pressure/high-temperature process to at least partially infiltratethe at least partially leached polycrystalline diamond table with ametallic infiltrant.
 2. The method of claim 1 wherein the plurality oftungsten-carbide-containing include a plurality of carbon-deficienttungsten carbide particles.
 3. The method of claim 1 wherein theplurality of tungsten-carbide-containing include a plurality of cementedcarbide particles including one or more types of tungsten-containing etaphases.
 4. The method of claim 1 wherein the cemented carbide substrateincludes one or more types of tungsten-containing eta phases.
 5. Themethod of claim 1 wherein the at least partially leached polycrystallinediamond table is formed by a method including: forming an assemblyincluding a plurality of diamond particles positioned adjacent to acemented carbide material, wherein the cemented carbide materialincludes one or more types of tungsten-containing eta phases; subjectingthe assembly to an additional high-pressure/high-temperature process inthe presence of a metal-solvent catalyst in which carbon reacts with atleast some of the one or more types of tungsten-containing eta phases ofthe cemented carbide material and the plurality of diamond particles aresintered to form a polycrystalline diamond table; separating thecemented carbide material from the polycrystalline diamond table; and atleast partially leaching at least a portion of the metal-solventcatalyst from the polycrystalline diamond table to form the at leastpartially leached polycrystalline diamond table, wherein the at leastpartially leached polycrystalline diamond table includes atungsten-containing material and is substantially free of defects formeddue to abnormal grain growth of tungsten carbide grains of the cementedcarbide material during the additional high-pressure/high-temperatureprocess.
 6. The method of claim 5 wherein the defects include pits,cracks, or combinations thereof.
 7. The method of claim 5 wherein thetungsten-containing material of the at least partially leachedpolycrystalline diamond table includes at least one member selected fromthe group consisting of substantially pure tungsten, a tungsten alloy,and tungsten carbide.
 8. The method of claim 5 wherein the at leastpartially leached polycrystalline diamond table includes a substrateinterfacial surface that is positioned adjacent to a table interfacialsurface of the cemented carbide substrate and is substantially free ofthe defects.
 9. The method of claim 1 wherein each of the cementedcarbide substrate and the at least partially leached polycrystallinediamond table is substantially free of chromium.
 10. The method of claim1 wherein subjecting the assembly to a high-pressure/high-temperatureprocess to at least partially infiltrate the at least partially leachedpolycrystalline diamond table with a metallic infiltrant includesinfiltrating the metallic infiltrant from the cemented carbidesubstrate.
 11. The method of claim 1 wherein the cemented carbidesubstrate includes substantially only one or more types oftungsten-containing eta phases cemented together with the metallicinfiltrant.
 12. The method of claim 1 wherein the at least partiallyleached polycrystalline diamond table is substantially free of ametal-solvent catalyst used in the sintering thereof.
 13. The method ofclaim 1 wherein the at least partially leached polycrystalline diamondtable includes bonded diamond grains exhibiting diamond-to-diamondbonding therebetween.
 14. The method of claim 1 wherein the at leastpartially leached polycrystalline diamond table includes a substrateinterfacial surface that is positioned adjacent to a table interfacialsurface of the cemented carbide substrate and is substantially planar.15. A method of fabricating a polycrystalline diamond compact,comprising: forming a first assembly including a plurality of diamondparticles positioned adjacent to a cemented carbide material, whereinthe cemented carbide material includes one or more types oftungsten-containing eta phases; subjecting the first assembly to a firsthigh-pressure/high-temperature process in the presence of ametal-solvent catalyst to form a polycrystalline diamond table;separating the cemented carbide material from the polycrystallinediamond table; at least partially leaching at least a portion of themetal-solvent catalyst from the polycrystalline diamond table to form anat least partially leached polycrystalline diamond table, wherein the atleast partially leached polycrystalline diamond table includes atungsten-containing material and is substantially free of defects formeddue to abnormal grain growth of tungsten carbide grains of the cementedcarbide material during the first high-pressure/high-temperatureprocess; forming a second assembly including a plurality oftungsten-carbide-containing particles positioned between the at leastpartially leached polycrystalline diamond table and a cemented carbidesubstrate; and subjecting the second assembly to a secondhigh-pressure/high-temperature process to at least partially infiltratethe at least partially leached polycrystalline diamond table with ametallic infiltrant.
 16. The method of claim 15 wherein the plurality oftungsten-carbide-containing particles include a plurality ofcarbon-deficient tungsten carbide particles.
 17. The method of claim 15wherein the plurality of tungsten-carbide-containing particles include aplurality of cemented carbide particles including one or more types oftungsten-containing eta phases.
 18. The method of claim 15 wherein thecemented carbide substrate includes one or more types oftungsten-containing eta phases.
 19. The method of claim 15 wherein theat least partially leached polycrystalline diamond table includes asubstrate interfacial surface that is positioned adjacent to a tableinterfacial surface of the cemented carbide substrate and issubstantially planar.
 20. A method of fabricating a polycrystallinediamond compact, comprising: forming a first assembly including aplurality of diamond particles positioned adjacent to a cemented carbidematerial; subjecting the first assembly to a firsthigh-pressure/high-temperature process in the presence of ametal-solvent catalyst in which carbon reacts with at least some of theone or more types of tungsten-containing eta phases of the cementedcarbide material and the plurality of diamond particles are sintered toform a polycrystalline diamond table; separating the cemented carbidematerial from the polycrystalline diamond table; at least partiallyleaching at least a portion of the metal-solvent catalyst from thepolycrystalline diamond table to form an at least partially leachedpolycrystalline diamond table; forming a second assembly including aplurality of tungsten-carbide-containing particles positioned betweenthe at least partially leached polycrystalline diamond table and acemented carbide substrate; and subjecting the second assembly to asecond high-pressure/high-temperature process to at least partiallyinfiltrate the at least partially leached polycrystalline diamond tablewith a metallic infiltrant from the cemented carbide substrate.